FIB

start:

1: wear hand cover n put unit inside the machine after baked the unit.
2: load + on Ebean + on Ibean
3. use Ebean to perform usentric.
3: adjust XY axis to 0.
4: bend the track by using a location on die as reference.
5. use joystick + button to adjust, 1",2", 5", 8" (click Z->FLW), then 26",40+",52" (remember x-align + keep focus)
6. move to the location required to probe or mill.
7. use ibean for following. (not sure for ibean power, if not mistaken is 150k.. will confirm later..)

mill if there is oxide layer
1. use SI.MPLT
2. adjust X: 0.8 and Y: 1.5 and Z: 2
3: remember to turn to IBEAN image and zoom in the location big enough
4. start milling
5. observe the milling hole and stop if the hole is big enough by refering to the oscilloscope and the curve (click endpoint to open and stop right after first overshoot)

probe point
1. use P.MPLT
2. use IBEAN image and put the box. (X:2.5 n Y: 7 n Z: 0.3)
3. tick PLT to insert the needle.
4. start probing
5. after finished remember to release the needle
6. use Ibean video and insert IEE to etch extra material.
7. release IEE

finish
1. turn off ibean n ebean
2.unload n pick up the unit.

ADDITIONAL
cross-sectioning
1. after usentric, move to location which required to execute.
2. use P.MPLT to put a layer on the location with 0.2 thick. (remember pull out needle)
3. use SI.MPLT to drill a hole at the bottom of the defect location. (size as large as the defect area)
4. use oso SI.MPLT perform cross-section with the c-s icon. (just right up after the drill hole)

important:
1. needle
2. oscilloscope

SEM-Leo

Leo
start
1: put unit inside the machine
2: pump unitl green light on
3: open the door to put unit on the track
4: close door n open the valve. (after clicked, it will be automatic opened)
5: click EHT
6: focus n observe (best working distance between 2-3mm)
7. choose inlens for the len setting.

finish
1: close EHT
2: close the valve
3: pump until green light on
4: open door and pick up the unit on the track
5: close door n vent.

-be very careful to move the unit n dun let the unit touch the lens of the machine

decapsulation

3 methods:

first - by fuming nitric acid

Procedure:

1: heat the unit on the 140'C hot plate.
2: drip few fuming nitric acid at the middle of unit by using plastic sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with acetone.
    (nitric acid can be neutralized by acetone)
4: continue step 1 to step 3 until whole die expose.

-do not overheat the unit, once the mold compound heat up above a certain temperature, it is very difficult to decap.
-during the driping period, once saw the reaction, need to pick up the unit quickly to avoid the waste of reaction form a dirty layer on the unit. the layer is very difficult to be removed.

second - by fuming sulfuric acid

1: heat the unit on the 245'C hot plate.

2: drip few fuming sulfuric acid at the middle of unit by using glass sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with water.
(sulfuric acid can be desolved in water)
4: continue step 1 to step 3 until whole die expose.

-normally the temperature of hot plate will be higher because although the plate showed 245'C but internal part of unit may not be that temperature. higher the temperature speed up the decap speed.

third - by fuming sulfuric acid with jek etcher

1: after the temperature reach the required temperature (245'C), perform dummy etch with jek etcher before use to decap unit. (perform half of the time of unit etching)
2: try to the kapton tape to cover the area of unit which do not required to be etched.
3: after finished dummy etch, put unit inside the machine and let it run.
4: wash with alcohol following with unit ultrasonicifation by using alcohol.
5: washed with water.

-when finished the decapsulation with jek etcher, dummy etch is needed to run one more time to clear the dirt left on the     machine.
-unit is covered by using cover model corresponding to the unit package type.

又趕場

如果我變成回憶--Tank

哇..顯... 今天在公司好想沒作到東西..
寫OSIR.. = =
layout開不到.. 作不到要作的case..
decapsulation沒時間.. 作不到第二個case..

過後
趕回家跟哥哥去看新車.. = =
vios J

過後
趕要去kajang吃sateh..
因為兄弟又要回加拿大了
8人整整吃了200條.. 好吊..

過後
去sungai long打機..
starcraft (好久沒玩了)
4場一過.. 就回家了..
因為多數人有做工..

今天我們的話題都離不開以前..
在中學時.. 作過什麼精彩的.. 有什麼可以回味的..
什麼是可以當笑話的.. 雖然是以前..
只能說有回憶真好..

那兄弟.. 看得出他很珍惜我們..
因為請我們吃sateh? XD
這次他回加拿大做工.. 不知何時再見..
只能跟他說.. 保重了..

P/S:
連續四天睡四粒鐘.. ><
應該就快去了吧.. = =

至少今天可以睡5粒鐘..
晚安

xx 1.39 AM xx

好倒楣

listening: 全世界失眠

今天很倒霉 = =

早上睡遲
11.20am才起來..
12pm greenbox singk = =..
還載了朋友 趕過去..

結果
在路上撞車 = =
就前面那輛vios..
有事沒事都停..
一下子emergency brake..
wtf..還有那麼大的距離
竟然一下子brake..
zzz..
我是反應快 來的及brake
但屁股卻被人開花了 = =
在那裡用了40多分鐘跟人settle = =
撞我車的人賠了rm230..
我就快快收下了..
因為還要趕場列..

唱完4人兩小時的k後

就去time square看看衣服褲子..
恩.. 新年氣氛果然讓人感到心情舒爽~
也沒買到什麼衣褲.. 也沒什麼plan
剛好哥哥從中國回來..
就去接他..
結果..
我弟弟已經去接了 = =
walao..沒通知一聲 = =
我都到那裡了.. = =

算了
回家追下一站幸福..

跟家人晚餐後..
就是現在.. 要出去看戲了.. 11.40pm的.. XD
今天整個就是down down 的..

要出了.. =)

xx 11.07 PM xx

一去一回

music player: 我愛他-丁噹

= =" 中毒了
一直在追看下一站幸福..
早知道就不開始看了..
好久沒這樣追戲了..
可是這套戲真得很不錯
淒美的愛情故事..

這星期公司..
又要寫OSIR = =
顯..
新人training三個月都還沒過
就中了兩次..
真是事事不順利

覺得
哥哥好爽.. 這星期可以去中國工作..
可是覺得他是去玩的.. LOL
希望明天他早點回來..

今下午
又回去中華打籃球..
竟然一場都沒贏過..
只能感慨老了..
但至少最後一場有贏到
諾不是的話.. 可能今天都睡不著呢..

晚上
本來plan去喝茶+看戲
但是媽的竟然給我下大雨..
就一定有人會放飛機
所有plan都cancel..
只好呆在家裡看MYASTRO頒獎典禮..
聽說是第一次舉辦..
感覺好像在看人家分豬肉..LOL
人人有份.. 只要有到... 哈哈

明天.. 爽
去唱K~~ =)
要早睡了..
但現在都幾點了 = =

P/S: 家文星期四回家了!
呵呵.. 期待一系列的活動.. 還有檳城之旅~
可是nichole拜三要出國作工了..
嗨.. 沒能兩全齊美...

晚安

xx 3.25 AM xx

離別時傷

媽的 今天放工突然下大雨..
想阻止我去送我朋友嗎 = =
想都別想..
因為我答應了他.. 肯定會去..

載完了人 就飛去了..
9點到機場..
就跟朋友先吃MCD dinner~
然後打電話給那位朋友..
哈哈.. 可是他在briefing..
過後她到MCD..
見到他 就拍了幾張照.. =)
為甚麼我怎麼那麼kick.. = =
就不可以正常點嗎?
應該大方點.. 卻加重他的情緒負擔..
他都那麼大方了
而且他和他的家人的心情一定很複雜..
百感交集..
應該安慰他的.. 可是沒辦到..
感覺讓他好不知所措.. 對不起
因為當時我也很混亂.. = =
現在仔細想了想才知道
他真的是好堅強 但我相信他最後一刻一定眼紅紅..

我
再為自己打拼吧
作多幾份工?
反正還是一個人.. 無所牽掛..

沒能看到最後一幕真是..
遺憾..

p/s
小心看著自己了..

謝謝你送我們大方又熱情的擁抱
感動但也kick著了.. @@"
還有我那位算剛認識你的朋友也說你很贊又大方.. =)
謝謝三位陪我的好友.. 呵呵
其中有被我騙來的... XD .. 不好意思了

想知道你會叫我去那兒嗎?
我說如果真有奇蹟吧..

晚安..

xx 2.52 AM xx