好吊.. 昨天幫brother發慶祝生日..
可是他做工做到很夜.. 所以就在晚上來個house party.. LOL
我們在PGRM租了個單位.. 是左右上下沒人的那個..
因為.. 今晚將會很吵..
傍晚.. 跟sean, anson, dailou, dk吃過晚餐 + 1 round dota 後..
就出發去了~ 相機也準備了.. 呵呵..
進到那單位後.. 永發還沒到..
就被逼喝了一種red bull + 咳嗽藥水那樣的酒 = ="
永發到了.. 再灌一次.. LOL
過後.. 我們一個一個跟發哥玩牌斗大小...
輸的喝不懂什麼野花酒+其他等等的.. 反正就是謂... = =
幸好我拿到 Ace!!!.. 不用喝... 永發就慘了.. 喝了很多.. :LOL
過後俊文來了.. 帶了amplifier來..
氣氛慢慢high起來.. LOL
然後我們都一起喝不懂什麼藍色的酒.. 滿烈的.. 喝完要含limau..
接下來 一直喝beer + 零食~
然後永發很慘.. 被人脫褲 + 拍照.. LOL
elynn都沒幫他...
整班惡魔.. 完事了不還他褲子..
就直接拿蛋糕唱生日歌... XD
最想不到的是.. 耀邦突然從後把永發的臉蓋下去蛋糕..
戰爭一觸即發... LOL..
所有人暴亂起來... cream.. 蛋糕.. 酒.. 像彈藥那麼被飛來飛去.. LOL
有的人躲進房間.. 有的跑出門口.. 還有的沒的躲.. 被攻得遍體倫傷..
永發最慘... 又沒褲子穿... LOL
戰爭一度停止了.. 我看到洲賢在撿蛋糕碎片.. 奇怪怎麼他這麼好.. 會收拾..
不久.. 那收好的蛋糕成了他最強的武器.. 攻擊我們.. LOL
我們躲在廁所都遭殃 = =
最令人意想不到的是.. 一位新認識的女孩.. 被永發用野花酒淋完整身..
臭到... LOL....
照瞫也被洲賢噴野花酒... 還溅到我... walao e... = =
一輪戰爭後.. 大家再繼續喝酒+聞歌跳舞.. LOL
維生跳舞跳到在地上滑來滑去... 地上都是剛剛的... = =
耀邦醉了語無倫次
永發洲賢醉倒不醒人事.. 之後起身都不懂自己做過什麼..
我在facebook.. =)
家文醉了一直餵人吃薯片 + 逼喝酒 ... LOL
保安打來他蓋掉.. LOL 強..
保安上門來他都不理..
還說之前在australia警察都管不到他們..
俊文 說如果罰錢.. 他給完.. LOL" 原來他醉了最慷慨...
過後.. 照昇清理了現場.. 大概4,5點了..
因為正陽也醉了駕不到車.. 我就幫他駕到照昇家.. 就在那過夜了..
p/s: 慶幸我沒很醉... 只是最後幫耀邦頂了最後一杯.. 有點頭暈把了..哈哈
隔天還有meeting + 買衣服... 整個就是累.. @@"
現在終於作完所有事了.. 只是還沒收拾自己的屋子 = ="
時間不多了... 照片以後再upload吧...
就到這裡吧 =)
晚安
xx 12.40 AM xx
Monday, 8 February 2010
Thursday, 4 February 2010
god bless me n thanks Jack =)
Wao~ today damn happy.. beccause actually 1 of my case i already want give up
and ready to write..
OSIR (write when have an undetermined case).
But..
the story is:
after i wright etch my unit n went for SEM analysis, i also did not see any defect.
tat time i really dun wan to continue my analysis.. felt tat i not suitable for FA..
but my mentor.. he come n helps me observe my unit in SEM..
n he observed a small defect..
Wow~ he damn pro..
after that i give Gary and Chua see the defect,
after their discussion, they let me closed the case as field oxide defect..
omg.. tat was very difficult to explain my excited feeling during the moment..
the case already processed approximate two weeks..
finally my work was not wasted!! XD
So..
tomorrow i will go office early n complete the report..
and..
try to go back home early.. because i long time no go home early le.. haha..
p/s:
dun so easy to give up man... hope is always there..
i think i will further study some theory book to make familiar to all the type of detect..
so i will not mis observe it..
and ready to write..
OSIR (write when have an undetermined case).
But..
the story is:
after i wright etch my unit n went for SEM analysis, i also did not see any defect.
tat time i really dun wan to continue my analysis.. felt tat i not suitable for FA..
but my mentor.. he come n helps me observe my unit in SEM..
n he observed a small defect..
Wow~ he damn pro..
after that i give Gary and Chua see the defect,
after their discussion, they let me closed the case as field oxide defect..
omg.. tat was very difficult to explain my excited feeling during the moment..
the case already processed approximate two weeks..
finally my work was not wasted!! XD
So..
tomorrow i will go office early n complete the report..
and..
try to go back home early.. because i long time no go home early le.. haha..
p/s:
dun so easy to give up man... hope is always there..
i think i will further study some theory book to make familiar to all the type of detect..
so i will not mis observe it..
Aqua Regia, Hydrofluoric, wright etch, liquid crystal, Plasma clean
Aqua regia
- to remove wire bond
- after used cleaned with water
Hydrofluoric acid
- to ship down to silicon level
- put unit into the acid for about 5 minutes
- after used cleaned with water
Wright etch
- to etch the silicon level to magnify the defect
- put unit in the wright etch for 5 secs
- after used washed with water
Liquid crystal
- to determine the hotspot where the failing transistor early turn on
- put slightly on the die and observe with microscope (remember hair dryer)
- after used washed with acetone
****Plasma clean
- to neutral the charge up when SEM analysis BEFORE wright etch (charge up will affect the etching)
- put into the machine and follow the instruction shown
- after used can continue to wright etch or SEM analysis again.
- to remove wire bond
- after used cleaned with water
Hydrofluoric acid
- to ship down to silicon level
- put unit into the acid for about 5 minutes
- after used cleaned with water
Wright etch
- to etch the silicon level to magnify the defect
- put unit in the wright etch for 5 secs
- after used washed with water
Liquid crystal
- to determine the hotspot where the failing transistor early turn on
- put slightly on the die and observe with microscope (remember hair dryer)
- after used washed with acetone
****Plasma clean
- to neutral the charge up when SEM analysis BEFORE wright etch (charge up will affect the etching)
- put into the machine and follow the instruction shown
- after used can continue to wright etch or SEM analysis again.
Wednesday, 3 February 2010
Voltage Bias Amplifying (VBA) analysis
1. switch on the voltage supply.
2. use multimeter + banana plug to adjust the required voltage which allows the transistor of failing pin of failing uni
turn on. (if 0.7V then try 0.4-0.6V first)
3.put unit inside the SPEM
4. use banana plug to connect two pins required to be measured.
5. CCD Imaging magnification switch to 2x. (default setting)
6. click on the eye (manual adjustment to put the unit under the observing len)
7. close the SPEM cover.
8. measure the ouptut to pc is at analogue mode.
9. turn on laser supply. (be caution for the laser power percentage, too high will destroy the unit)
10. change magnification to 5x in CCD and aquire image to measure the image is in focus.
11. change to laser mode and aquire image and focus the unit.
12. change to laser auxiliary mode use point scanning mode, open voltage supply, start to observe VBA spot.
13. if there is any overload, adjust the sensitive.
14. if no spot was observed, change the filter bandwidth to filter out the noise.
15. close laser auxiliary and on overlay for laser.
16. observe the spot and capture the image.
17. turn off the laser when finished using.
2. use multimeter + banana plug to adjust the required voltage which allows the transistor of failing pin of failing uni
turn on. (if 0.7V then try 0.4-0.6V first)
3.put unit inside the SPEM
4. use banana plug to connect two pins required to be measured.
5. CCD Imaging magnification switch to 2x. (default setting)
6. click on the eye (manual adjustment to put the unit under the observing len)
7. close the SPEM cover.
8. measure the ouptut to pc is at analogue mode.
9. turn on laser supply. (be caution for the laser power percentage, too high will destroy the unit)
10. change magnification to 5x in CCD and aquire image to measure the image is in focus.
11. change to laser mode and aquire image and focus the unit.
12. change to laser auxiliary mode use point scanning mode, open voltage supply, start to observe VBA spot.
13. if there is any overload, adjust the sensitive.
14. if no spot was observed, change the filter bandwidth to filter out the noise.
15. close laser auxiliary and on overlay for laser.
16. observe the spot and capture the image.
17. turn off the laser when finished using.
Monday, 1 February 2010
好多人了
哈哈.. 爽!! 這個拜六下午終於有好多人打球了!!
因為家文回來了? XD
總數9人...cool~~
這次我們在新場打了, 不用在跟外面的人打,
因為要等很久才輪到我們.. XD
這次打的真痛快..
可是還是有人遲到.. LOL
期待下個星期會更多人回來打..XD
過後晚上家文,俊文,維生他們要去clubbing
所以我們就分道揚鑣了..
我們吃過晚餐後, 就去leisure mall對面的1st station聽歌玩牌猜拳喝酒.. XD
好吊..洲賢帶椰花酒來.. 輸的人要喝一口...
媽的 他自己喜歡喝就好了.. 還要逼我們喝.. = ="
結果 照昇喝到嘔.. LOL
因為明天有東西做.. 所以早回了...
不然要跟他們看球看到三點多 0.0
會死掉..
P/S:
給了down payment..
預定新年前會拿到我的vios J =)
晚安了..
xx 12.48 AM xx
因為家文回來了? XD
總數9人...cool~~
這次我們在新場打了, 不用在跟外面的人打,
因為要等很久才輪到我們.. XD
這次打的真痛快..
可是還是有人遲到.. LOL
期待下個星期會更多人回來打..XD
過後晚上家文,俊文,維生他們要去clubbing
所以我們就分道揚鑣了..
我們吃過晚餐後, 就去leisure mall對面的1st station聽歌玩牌猜拳喝酒.. XD
好吊..洲賢帶椰花酒來.. 輸的人要喝一口...
媽的 他自己喜歡喝就好了.. 還要逼我們喝.. = ="
結果 照昇喝到嘔.. LOL
因為明天有東西做.. 所以早回了...
不然要跟他們看球看到三點多 0.0
會死掉..
P/S:
給了down payment..
預定新年前會拿到我的vios J =)
晚安了..
xx 12.48 AM xx
parametric analysis
Parametric failure
non-destructive analysis
failed open
1. send for Csam analysis
2. send for X-ray inspection
3. TDR analysis if the unit consist of iron ball at bottom of the unit.
failed short
1. TDR analysis if the unit consist of iron ball at bottom of the unit.
destructive analysis
decapsulation first
1. observe the bond pad of failing pin.
2. observe the electrical routing path of failing pin
3. observe the output buffer of failing pin
further analysis 1
1. liquid crystal
2. VBA
3 light emission
further analysis 2
submarine first
1. parallel lapping (approximate 8 minutes for oxide removal)
2. observation for every level exposed during parallel lapping
further analysis 3
Aqua regia first
1. SEM
2. wright etch + SEM
additional information:
for adjacent opened failure, cross section analysis can be performed upon further analysis 1.
failure mechanism for open/short normally related to EOS, ESD, carbonized mold compound, lifted wire, wire touching, and somemore( will add in next time)
observe slowly and carefully is the key to success
non-destructive analysis
failed open
1. send for Csam analysis
2. send for X-ray inspection
3. TDR analysis if the unit consist of iron ball at bottom of the unit.
failed short
1. TDR analysis if the unit consist of iron ball at bottom of the unit.
destructive analysis
decapsulation first
1. observe the bond pad of failing pin.
2. observe the electrical routing path of failing pin
3. observe the output buffer of failing pin
further analysis 1
1. liquid crystal
2. VBA
3 light emission
further analysis 2
submarine first
1. parallel lapping (approximate 8 minutes for oxide removal)
2. observation for every level exposed during parallel lapping
further analysis 3
Aqua regia first
1. SEM
2. wright etch + SEM
additional information:
for adjacent opened failure, cross section analysis can be performed upon further analysis 1.
failure mechanism for open/short normally related to EOS, ESD, carbonized mold compound, lifted wire, wire touching, and somemore( will add in next time)
observe slowly and carefully is the key to success
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