Showing posts with label Failure Analysis Lab Operational documents. Show all posts
Showing posts with label Failure Analysis Lab Operational documents. Show all posts
Thursday, 4 February 2010
Aqua Regia, Hydrofluoric, wright etch, liquid crystal, Plasma clean
Aqua regia
- to remove wire bond
- after used cleaned with water
Hydrofluoric acid
- to ship down to silicon level
- put unit into the acid for about 5 minutes
- after used cleaned with water
Wright etch
- to etch the silicon level to magnify the defect
- put unit in the wright etch for 5 secs
- after used washed with water
Liquid crystal
- to determine the hotspot where the failing transistor early turn on
- put slightly on the die and observe with microscope (remember hair dryer)
- after used washed with acetone
****Plasma clean
- to neutral the charge up when SEM analysis BEFORE wright etch (charge up will affect the etching)
- put into the machine and follow the instruction shown
- after used can continue to wright etch or SEM analysis again.
- to remove wire bond
- after used cleaned with water
Hydrofluoric acid
- to ship down to silicon level
- put unit into the acid for about 5 minutes
- after used cleaned with water
Wright etch
- to etch the silicon level to magnify the defect
- put unit in the wright etch for 5 secs
- after used washed with water
Liquid crystal
- to determine the hotspot where the failing transistor early turn on
- put slightly on the die and observe with microscope (remember hair dryer)
- after used washed with acetone
****Plasma clean
- to neutral the charge up when SEM analysis BEFORE wright etch (charge up will affect the etching)
- put into the machine and follow the instruction shown
- after used can continue to wright etch or SEM analysis again.
Wednesday, 3 February 2010
Voltage Bias Amplifying (VBA) analysis
1. switch on the voltage supply.
2. use multimeter + banana plug to adjust the required voltage which allows the transistor of failing pin of failing uni
turn on. (if 0.7V then try 0.4-0.6V first)
3.put unit inside the SPEM
4. use banana plug to connect two pins required to be measured.
5. CCD Imaging magnification switch to 2x. (default setting)
6. click on the eye (manual adjustment to put the unit under the observing len)
7. close the SPEM cover.
8. measure the ouptut to pc is at analogue mode.
9. turn on laser supply. (be caution for the laser power percentage, too high will destroy the unit)
10. change magnification to 5x in CCD and aquire image to measure the image is in focus.
11. change to laser mode and aquire image and focus the unit.
12. change to laser auxiliary mode use point scanning mode, open voltage supply, start to observe VBA spot.
13. if there is any overload, adjust the sensitive.
14. if no spot was observed, change the filter bandwidth to filter out the noise.
15. close laser auxiliary and on overlay for laser.
16. observe the spot and capture the image.
17. turn off the laser when finished using.
2. use multimeter + banana plug to adjust the required voltage which allows the transistor of failing pin of failing uni
turn on. (if 0.7V then try 0.4-0.6V first)
3.put unit inside the SPEM
4. use banana plug to connect two pins required to be measured.
5. CCD Imaging magnification switch to 2x. (default setting)
6. click on the eye (manual adjustment to put the unit under the observing len)
7. close the SPEM cover.
8. measure the ouptut to pc is at analogue mode.
9. turn on laser supply. (be caution for the laser power percentage, too high will destroy the unit)
10. change magnification to 5x in CCD and aquire image to measure the image is in focus.
11. change to laser mode and aquire image and focus the unit.
12. change to laser auxiliary mode use point scanning mode, open voltage supply, start to observe VBA spot.
13. if there is any overload, adjust the sensitive.
14. if no spot was observed, change the filter bandwidth to filter out the noise.
15. close laser auxiliary and on overlay for laser.
16. observe the spot and capture the image.
17. turn off the laser when finished using.
Monday, 1 February 2010
parametric analysis
Parametric failure
non-destructive analysis
failed open
1. send for Csam analysis
2. send for X-ray inspection
3. TDR analysis if the unit consist of iron ball at bottom of the unit.
failed short
1. TDR analysis if the unit consist of iron ball at bottom of the unit.
destructive analysis
decapsulation first
1. observe the bond pad of failing pin.
2. observe the electrical routing path of failing pin
3. observe the output buffer of failing pin
further analysis 1
1. liquid crystal
2. VBA
3 light emission
further analysis 2
submarine first
1. parallel lapping (approximate 8 minutes for oxide removal)
2. observation for every level exposed during parallel lapping
further analysis 3
Aqua regia first
1. SEM
2. wright etch + SEM
additional information:
for adjacent opened failure, cross section analysis can be performed upon further analysis 1.
failure mechanism for open/short normally related to EOS, ESD, carbonized mold compound, lifted wire, wire touching, and somemore( will add in next time)
observe slowly and carefully is the key to success
non-destructive analysis
failed open
1. send for Csam analysis
2. send for X-ray inspection
3. TDR analysis if the unit consist of iron ball at bottom of the unit.
failed short
1. TDR analysis if the unit consist of iron ball at bottom of the unit.
destructive analysis
decapsulation first
1. observe the bond pad of failing pin.
2. observe the electrical routing path of failing pin
3. observe the output buffer of failing pin
further analysis 1
1. liquid crystal
2. VBA
3 light emission
further analysis 2
submarine first
1. parallel lapping (approximate 8 minutes for oxide removal)
2. observation for every level exposed during parallel lapping
further analysis 3
Aqua regia first
1. SEM
2. wright etch + SEM
additional information:
for adjacent opened failure, cross section analysis can be performed upon further analysis 1.
failure mechanism for open/short normally related to EOS, ESD, carbonized mold compound, lifted wire, wire touching, and somemore( will add in next time)
observe slowly and carefully is the key to success
Wednesday, 27 January 2010
FIB
start:
1: wear hand cover n put unit inside the machine after baked the unit.
2: load + on Ebean + on Ibean
3. use Ebean to perform usentric.
3: adjust XY axis to 0.
4: bend the track by using a location on die as reference.
5. use joystick + button to adjust, 1",2", 5", 8" (click Z->FLW), then 26",40+",52" (remember x-align + keep focus)
6. move to the location required to probe or mill.
7. use ibean for following. (not sure for ibean power, if not mistaken is 150k.. will confirm later..)
mill if there is oxide layer
1. use SI.MPLT
2. adjust X: 0.8 and Y: 1.5 and Z: 2
3: remember to turn to IBEAN image and zoom in the location big enough
4. start milling
5. observe the milling hole and stop if the hole is big enough by refering to the oscilloscope and the curve (click endpoint to open and stop right after first overshoot)
probe point
1. use P.MPLT
2. use IBEAN image and put the box. (X:2.5 n Y: 7 n Z: 0.3)
3. tick PLT to insert the needle.
4. start probing
5. after finished remember to release the needle
6. use Ibean video and insert IEE to etch extra material.
7. release IEE
finish
1. turn off ibean n ebean
2.unload n pick up the unit.
ADDITIONAL
cross-sectioning
1. after usentric, move to location which required to execute.
2. use P.MPLT to put a layer on the location with 0.2 thick. (remember pull out needle)
3. use SI.MPLT to drill a hole at the bottom of the defect location. (size as large as the defect area)
4. use oso SI.MPLT perform cross-section with the c-s icon. (just right up after the drill hole)
important:
1. needle
2. oscilloscope
1: wear hand cover n put unit inside the machine after baked the unit.
2: load + on Ebean + on Ibean
3. use Ebean to perform usentric.
3: adjust XY axis to 0.
4: bend the track by using a location on die as reference.
5. use joystick + button to adjust, 1",2", 5", 8" (click Z->FLW), then 26",40+",52" (remember x-align + keep focus)
6. move to the location required to probe or mill.
7. use ibean for following. (not sure for ibean power, if not mistaken is 150k.. will confirm later..)
mill if there is oxide layer
1. use SI.MPLT
2. adjust X: 0.8 and Y: 1.5 and Z: 2
3: remember to turn to IBEAN image and zoom in the location big enough
4. start milling
5. observe the milling hole and stop if the hole is big enough by refering to the oscilloscope and the curve (click endpoint to open and stop right after first overshoot)
probe point
1. use P.MPLT
2. use IBEAN image and put the box. (X:2.5 n Y: 7 n Z: 0.3)
3. tick PLT to insert the needle.
4. start probing
5. after finished remember to release the needle
6. use Ibean video and insert IEE to etch extra material.
7. release IEE
finish
1. turn off ibean n ebean
2.unload n pick up the unit.
ADDITIONAL
cross-sectioning
1. after usentric, move to location which required to execute.
2. use P.MPLT to put a layer on the location with 0.2 thick. (remember pull out needle)
3. use SI.MPLT to drill a hole at the bottom of the defect location. (size as large as the defect area)
4. use oso SI.MPLT perform cross-section with the c-s icon. (just right up after the drill hole)
important:
1. needle
2. oscilloscope
SEM-Leo
Leo
start
1: put unit inside the machine
2: pump unitl green light on
3: open the door to put unit on the track
4: close door n open the valve. (after clicked, it will be automatic opened)
5: click EHT
6: focus n observe (best working distance between 2-3mm)
7. choose inlens for the len setting.
finish
1: close EHT
2: close the valve
3: pump until green light on
4: open door and pick up the unit on the track
5: close door n vent.
-be very careful to move the unit n dun let the unit touch the lens of the machine
start
1: put unit inside the machine
2: pump unitl green light on
3: open the door to put unit on the track
4: close door n open the valve. (after clicked, it will be automatic opened)
5: click EHT
6: focus n observe (best working distance between 2-3mm)
7. choose inlens for the len setting.
finish
1: close EHT
2: close the valve
3: pump until green light on
4: open door and pick up the unit on the track
5: close door n vent.
-be very careful to move the unit n dun let the unit touch the lens of the machine
decapsulation
3 methods:
first - by fuming nitric acid
Procedure:
1: heat the unit on the 140'C hot plate.
2: drip few fuming nitric acid at the middle of unit by using plastic sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with acetone.
(nitric acid can be neutralized by acetone)
4: continue step 1 to step 3 until whole die expose.
-do not overheat the unit, once the mold compound heat up above a certain temperature, it is very difficult to decap.
-during the driping period, once saw the reaction, need to pick up the unit quickly to avoid the waste of reaction form a dirty layer on the unit. the layer is very difficult to be removed.
second - by fuming sulfuric acid
1: heat the unit on the 245'C hot plate.
2: drip few fuming sulfuric acid at the middle of unit by using glass sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with water.
(sulfuric acid can be desolved in water)
4: continue step 1 to step 3 until whole die expose.
-normally the temperature of hot plate will be higher because although the plate showed 245'C but internal part of unit may not be that temperature. higher the temperature speed up the decap speed.
third - by fuming sulfuric acid with jek etcher
1: after the temperature reach the required temperature (245'C), perform dummy etch with jek etcher before use to decap unit. (perform half of the time of unit etching)
2: try to the kapton tape to cover the area of unit which do not required to be etched.
3: after finished dummy etch, put unit inside the machine and let it run.
4: wash with alcohol following with unit ultrasonicifation by using alcohol.
5: washed with water.
-when finished the decapsulation with jek etcher, dummy etch is needed to run one more time to clear the dirt left on the machine.
-unit is covered by using cover model corresponding to the unit package type.
first - by fuming nitric acid
Procedure:
1: heat the unit on the 140'C hot plate.
2: drip few fuming nitric acid at the middle of unit by using plastic sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with acetone.
(nitric acid can be neutralized by acetone)
4: continue step 1 to step 3 until whole die expose.
-do not overheat the unit, once the mold compound heat up above a certain temperature, it is very difficult to decap.
-during the driping period, once saw the reaction, need to pick up the unit quickly to avoid the waste of reaction form a dirty layer on the unit. the layer is very difficult to be removed.
second - by fuming sulfuric acid
1: heat the unit on the 245'C hot plate.
2: drip few fuming sulfuric acid at the middle of unit by using glass sucker.
3: after observed the reaction between mold compound n acid, use tweezer to pick up the unit n wash with water.
(sulfuric acid can be desolved in water)
4: continue step 1 to step 3 until whole die expose.
-normally the temperature of hot plate will be higher because although the plate showed 245'C but internal part of unit may not be that temperature. higher the temperature speed up the decap speed.
third - by fuming sulfuric acid with jek etcher
1: after the temperature reach the required temperature (245'C), perform dummy etch with jek etcher before use to decap unit. (perform half of the time of unit etching)
2: try to the kapton tape to cover the area of unit which do not required to be etched.
3: after finished dummy etch, put unit inside the machine and let it run.
4: wash with alcohol following with unit ultrasonicifation by using alcohol.
5: washed with water.
-when finished the decapsulation with jek etcher, dummy etch is needed to run one more time to clear the dirt left on the machine.
-unit is covered by using cover model corresponding to the unit package type.
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